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ПрофессииThe MOCVD Challenge: A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition (Electronic Materials and Devices)

The MOCVD Challenge: A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition (Electronic Materials and Devices)
Название:The MOCVD Challenge: A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition (Electronic Materials and Devices)
Автор:Manijeh Razeghi
Издательство:CRC Press
ISBN:1439806985
Дата издания:2010-08-17
Страниц:799
Язык:Английский
Формат:PDF
Размер: 36,3 MB

Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive review covering GaInAsP-InP, GaInAsP-GaAs, and related material for electronic and photonic device applications. These III-V semiconductor compounds have been used to realize the electronic, optoelectronic, and quantum devices that have revolutionized telecommunications. The figure on the back cover gives the energy gap and lattice parameter for the entire compositional range of the binary, ternary, and quaternary...





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